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| SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FCX591A C PART MARKING DETAIL COMPLEMENTARY TYPE - P2 FCX491A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -40 -40 -5 -2 -1 -200 1 -65 to +150 B C E UNIT V V V A A mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). Breakdown Voltages V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio ICBO IEBO ICES VCE(sat) VBE(sat) VBE(on) hFE 300 300 250 160 30 150 10 -40 -40 -5 -100 -100 -100 SYMBOL MIN. MAX. UNIT CONDITIONS. V V V nA nA nA V V V V V IC=-100A IC=-10mA* IE=-100A VCB=-30V VEB=-4V VCES=-30V IC=-100mA,IB=-1mA* IC=-500mA IB=-20mA* IC=-1A, IB=-100mA* IC=-1A, IB=-50mA* IC=-1A, VCE=-5V* IC=-1mA, IC=-100mA*, IC=-500mA*, VCE=-5V IC=-1A*, IC=-2A*, MHz pF IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz -0.2 -0.35 -0.5 -1.1 -1.0 800 Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device For typical characteristics graphs see FMMT591A datasheet 3 - 93 |
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